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| MITSUBISHI SEMICONDUCTOR M54537P/FP 7-UNIT 350mA TRANSISTOR ARRAY DESCRIPTION M54537P and M54537FP are seven-circuit transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. PIN CONFIGURATION INPUT 16 O1 15 O2 14 O3 13 O4 OUTPUT 12 O5 11 O6 10 O7 9 VCC IN1 1 IN2 2 IN3 3 IN4 4 IN5 5 IN6 6 IN7 7 GND 8 FEATURES Medium breakdown voltage (BVCEO 20V) High-current driving (Ic(max) = 350mA) Driving available with PMOS IC output Low collector-emitter saturation voltage (VCE(sat) is 0.5V when IC is 250mA) Wide operating temperature range (Ta = -20 to +75C) 16P4(P) Package type 16P2N-A(FP) CIRCUIT DIAGRAM APPLICATION Drives of relays and printers, digit drives of indication elements (LEDs and lamps), and MOS-bipolar logic IC interfaces 380 VCC 2K INPUT OUTPUT 20K 2K FUNCTION The M54537P and M54537FP each have seven circuits consisting of NPN transistors. Resistance of 2k is connected to the inputs. The output transistor emitters are connected to the GND pin (pin 8). VCC is connected to pin 9. The collector current is 350 mA maximum. Collector-emitter supply voltage is 20V maximum. The collector-emitter saturation voltage is as low as 0.5 V or even lower, when IC is 250mA. The M54537FP is enclosed in a molded small flat package, enabling space-saving design. GND The seven circuits share the VCC and GND. The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit : ABSOLUTE MAXIMUM RATINGS Symbol VCC VCEO IC VI Pd Topr Tstg Parameter Supply voltage Collector-emitter voltage Collector current Input voltage Power dissipation Operating temperature Storage temperature (Unless otherwise noted, Ta = -20 ~ +75C) Conditions Output, H Current per circuit output, L Ta = 25C, when mounted on board Ratings 10 -0.5 ~ +20 350 -0.5 ~ +10 1.47(P)/1.00(FP) -20 ~ +75 -55 ~ +125 Unit V V mA V W C C Aug. 1999 MITSUBISHI SEMICONDUCTOR M54537P/FP 7-UNIT 350mA TRANSISTOR ARRAY RECOMMENDED OPERATING CONDITIONS Symbol VCC VO Supply voltage Output voltage Collector current (Current per 1 circuit when 7 circuits are coming on simultaneously) "H" input voltage "L" input voltage Parameter (Unless otherwise noted, Ta = -20 ~ +75C) min 3 0 Limits typ -- -- -- -- -- -- max 8 20 250 Unit V V IC VCC = 6.5V, Duty Cycle P : no more than 40% FP : no more than 25% VCC = 6.5V, Duty Cycle P : no more than 60% FP : no more than 40% 0 0 3 0 mA 150 6 0.3 V V VIH VIL ELECTRICAL CHARACTERISTICS Symbol V (BR) CEO VCE (sat) II ICC hFE Parameter (Unless otherwise noted, Ta = -20 ~ +75C) Test conditions VCC = 8V, ICEO = 100A Limits min 20 -- -- -- -- -- 1000 typ+ -- 0.28 0.17 0.7 2.9 17 7000 max -- 0.5 0.35 1.5 5.6 27 -- Unit V V mA mA -- Collector-emitter breakdown voltage VI = 3V, VCC = 6.5V, IC = 250mA Collector-emitter saturation voltage VI = 3V, VCC = 3V, IC = 150mA Input current Supply current (one circuit coming on) DC amplification factor VCC = 8V, VI = 3.2V VCC = 8V, VI = 8V VCC = 8V, VI = 3.2V VCE = 4V, VCC = 6.5V, IC = 250mA, Ta = 25C + : The typical values are those measured under ambient temperature (Ta) of 25C. There is no guarantee that these values are obtained under any conditions. SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25C) Symbol ton toff Parameter Turn-on time Turn-off time CL = 15pF (note 1) Test conditions Limits min -- -- typ 15 840 max -- -- Unit ns ns NOTE 1 TEST CIRCUIT INPUT VCC Measured device PG 50 CL VO TIMING DIAGRAM 50% RL OUTPUT 50% INPUT OUTPUT 50% 50% ton (1) Pulse generator (PG) characteristics : PRR = 1kHz, tw = 10s, tr = 6ns, tf = 6ns, ZO = 50 VP = 3VP-P (2) Input-output conditions : RL = 40, VO = 10V, VCC = 6.5V (3) Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes toff Aug. 1999 MITSUBISHI SEMICONDUCTOR M54537P/FP 7-UNIT 350mA TRANSISTOR ARRAY TYPICAL CHARACTERISTICS Output Saturation Voltage Collector Current Characteristics VCC = 3V VI = 3V M54537P Ta = 25C Ta = -20C Thermal Derating Factor Characteristics 2.0 400 Power dissipation Pd (W) 1.5 Collector current Ic (mA) 300 Ta = 75C 1.0 M54537FP 200 0.5 100 0 0 25 50 75 100 0 0 0.1 0.2 0.3 0.4 0.5 Ambient temperature Ta (C) Duty-Cycle-Collector Characteristics (M54537P) 400 to Collector current Ic (mA) Output saturation voltage VCE (sat) (V) Duty-Cycle-Collector Characteristics (M54537P) 400 Collector current Ic (mA) 300 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *VCC = 6.5V *Ta = 25C 300 200 200 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *VCC = 6.5V *Ta = 75C 100 100 100 0 0 20 40 60 80 100 0 0 20 40 60 80 Duty cycle (%) Duty-Cycle-Collector Characteristics (M54537FP) 400 300 200 100 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *VCC = 6.5V *Ta = 25C Duty cycle (%) Duty-Cycle-Collector Characteristics (M54537FP) 400 Collector current Ic (mA) Collector current Ic (mA) 300 200 100 0 0 20 40 60 80 100 0 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *VCC = 6.5V *Ta = 75C 60 80 100 0 20 40 Duty cycle (%) Duty cycle (%) Aug. 1999 MITSUBISHI SEMICONDUCTOR M54537P/FP 7-UNIT 350mA TRANSISTOR ARRAY 104 7 DC Amplification Factor Collector Current Characteristics VCC = 6.5V VCE = 4V Ta = 75C Grounded Emitter Transfer Characteristics 400 VCC = 6.5V VCE = 4V DC amplification factor hFE 5 3 2 Collector current Ic (mA) Ta = 25C Ta = -20C Ta = 75C 300 Ta = 25C Ta = -20C 103 7 5 3 2 200 100 102 1 10 2 3 5 7 102 2 3 5 7 103 0 0 0.5 1.0 1.5 2.0 Collector current Ic (mA) Input voltage VI (V) Input Characteristics 5 VCC = 8V Supply Current Characteristics 50 VI = 3.2V Ta = -20C 3 Supply current Icc (mA) 4 40 Input current II (mA) 30 Ta = -20C 2 Ta = 25C Ta = 75C 20 Ta = 25C Ta = 75C 1 10 0 0 2 4 6 8 10 0 0 2 4 6 8 10 Input voltage VI (V) Supply voltage VCC (V) Aug. 1999 |
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